BaGa4Se7 Crystal - An Overview
BaGa4Se7 Crystal - An Overview
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Just about every block with atom locations and displacement arrows displays one particular method and whole 9 modes are outlined listed here. The A�?or maybe a�?labels below the blocks show the mode symmetries within the (C_3^two) group notation. The figures underneath the blocks are the experimentally measured (in crimson) and calculated values (in black) phonon energies.
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Substantial efficiency and high peak power picosecond mid-infrared optical parametric amplifier dependant on BaGa4Se7 crystal.
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The deforming vibrations of Ga–O–Ga bonds within the defect crystal produce two IR absorption bands located about 665 cm−1, equivalent to the crystal residual absorption. The end result should help us to eradicate the residual absorption and improve the crystal top quality.
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A continual-wave mid-infrared radiation from change frequency technology by mixing a ongoing-wave Ti: sapphire laser and also a ongoing-wave YAG laser in the 15 mm lengthy BaGa4Se7 crystal is…
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β-BaGa4Se7: a promising IR nonlinear optical crystal built by predictable structural rearrangement†
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The BaGa4Se7 (BGSe) crystal is a wonderful mid- and far-IR nonlinear optical crystal, but normally displays an sudden residual absorption peak all-around 15 μm which significantly deteriorates the crystal functionality. The structural origin of residual absorption is still underneath debate.
′�?, by using a frequency of 295 cm−1, is attributed into the stretching vibration of Ga–Se bonds. The two-phonon absorption from the 295 cm−one phonon corresponds on the crystal IR absorption edge, instead of the residual absorption peak. Density purposeful concept computations show that the residual absorption of the BGSe crystal originates from your OSe defect (Se is substituted by O).